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GP1S52VJ000F 1 sheet no.: d3-a02401en date oct. 3. 2005 ? sharp corporation notice the content of data sheet is subject to change without prior notice. in the absence of con rmation by device speci cation sheets, sharp takes no responsibility for any defects that may occur in equipment using any sharp devices shown in catalogs, data books, etc. contact sharp in order to obtain the latest device speci cation sheets before using any sharp device. GP1S52VJ000F gap : 3mm slit : 0.5mm phototransistor output, case package transmissive photointerrupter description GP1S52VJ000F is a standard, phototransistor output, transmissive photointerrupter with opposing emitter and detector in a case, providing non-contact sensing. for this family of devices, the emitter and detector are insert- ed in a case, resulting in a through-hole design. features 1. transmissive with phototransistor output 2. highlights : ? verical slit for alternate motion detection 3. key parameters : ? gap width : 3mm ? slit width (detector side): 0.5mm ? package : 12.2 10 5mm 4. lead free and rohs directive compliant agency approvals/compliance 1. compliant with rohs directive applications 1. general purpose detection of object presence or mo- tion. 2. example : printer, fax, optical storage unit
2 sheet no.: d3-a02501en GP1S52VJ000F internal connection diagram outline dimensions (unit : mm) product mass : approx. 0.49g ? unspeci ed tolerance shall be as follows ; dimension (d) tolerance d 6 0.1 6 < d 18 0.2 ? ( ) : reference dimensions anode top view cathode collector emitter 1 3 4 2 1 2 3 4 (2.5) ( 9.2 ) (2.54) 10 5 c1 7.5 2.5 5 12.2 + 0.3 ? 0.3 3 + 0.2 ? 0.1 s52 4 ? 0.4 + 0.3 ? 0.1 4 ? 0.45 + 0.3 ? 0.1 10 min. 1 2 3 4 date code mark (both side) b-b ? section 3.5 0.5 b a b ? a ? 1.5 a-a ? section 0.5 model no. sharp mark ?s? (detctor center) top view dip soldering material : sn ? 3ag ? 0.5cu
3 sheet no.: d3-a02501en GP1S52VJ000F repeats in a 10 year cycle date code (2 digit) 1st digit 2nd digit year of production month of production a.d. mark month mark 2000 0 1 1 2001 1 2 2 2002 2 3 3 2003 3 4 4 2004 4 5 5 2005 5 6 6 2006 6 7 7 2007 7 8 8 2008 8 9 9 2009 9 10 x 2010 0 11 y : : 12 z country of origin japan, indonesia or philippines (indicated on the packing case)
4 sheet no.: d3-a02501en GP1S52VJ000F absolute maximum ratings electro-optical characteristics (t a = 25 ? c) parameter symbol rating unit input ? 1 forward current i f 50 ma ? 1, 2 peak forward current i fm 1a reverse voltage v r 6v power dissipation p 75 mw output collector-emitter voltage v ceo 35 v emitter-collector voltage v eco 6v collector current i c 20 ma ? 1 collector power dissipation p c 75 mw operating temperature t opr ? 25 to + 85 ? c storage temperature t stg ? 40 to + 100 ? c ? 3 soldering temperature t sol 260 ? c ? 1 refer to fig. 1, 2, 3 ? 2 pulse width 100 s, duty ratio = 0.01 ? 3 for 5s or less (t a = 25 ? c) parameter symbol condition min. typ. max. unit input forward voltage v f i f = 20ma ? 1.25 1.4 v peak forward voltage v fm i fm = 0.5a 3 4 v reverse current i r v r = 3v ?? 10 a output collector dark current i ceo v ce = 20v ? 1 100 na transfer charac- teristics collector current i c v ce = 5v, i f = 20ma 0.5 ? 5ma collector-emitter saturation voltage v ce(sat) i f = 40ma, i c = 0.5ma ?? 0.4 v response time rise time t r v ce = 2v, i c = 2ma, r l = 100 ? 315 s fall time t f ? 420
5 sheet no.: d3-a02501en GP1S52VJ000F fig.5 collector current vs. forward current fig.6 collector current vs. collector-emitter voltage fig.3 peak forward current vs. duty ratio fig.4 forward current vs. forward voltage peak forward current i fm (ma) duty ratio 100 10 10 ? 2 10 ? 1 1 000 pulse width 100 s t a = 25 ? c 1 forward current i f (ma) foward voltage v f ( v ) 100 10 1 3.5 3 2.5 2 1.5 1 0.5 0 25 ? c 0 ? c ? 25 ? c 50 ? c t a = 75 ? c collector current i c (ma) forward current i f ( ma ) 0 0 v ce = 5v t a = 25 ? c 12 8 10 6 4 2 10 20 30 40 50 collector current i c (ma) collector-emitter v ce ( v ) 78910 6 7 5 6 3 4 2 1 0 05 4 3 2 1 i f = 50ma 40ma 30ma 20ma 10ma t a = 25 ? c fig.1 forward current vs. ambient temperature fig.2 collector power dissipation vs. ambient temperature forward current i f (ma) ambient temperature t a ( ? c ) ? 25 0 25 50 75 85 100 0 10 20 30 40 50 60 collector power dissipation p c (mw) ambient temperature t a ( ? c ) ? 25 0 25 50 75 85 100 0 20 40 60 80 100 120 75 15
6 sheet no.: d3-a02501en GP1S52VJ000F fig.7 collector current vs. ambient temperature fig.8 collector-emitter saturation voltage vs. ambient temperature fig.9 response time vs. load resistance fig.10 test circuit for response time fig.11 frequency response fig.12 collector dark current vs. ambient temperature collector current i c (ma) ambient temperature t a ( ? c ) 025 ? 25 50 100 75 4 i f = 20ma v ce = 5v 3 2 1 0 response time ( s) load resistance r l ( k ) 10 10 1 0.1 0.1 0.01 v ce = 2v i c = 2ma t a = 25 ? c 100 1 t f t r t d t s collector-emitter saturation voltage v ce (sat) (v) ambient temperature t a ( ? c) i f = 40ma i c = 0.5ma 0.25 0.2 0.15 0.1 0.05 ? 25 75 100 50 25 0 0 voltage gain a v (db) frequency f ( hz ) 10 6 10 5 10 4 0 ? 5 ? 10 ? 15 ? 20 10 3 10 2 v ce = 2v i c = 2ma t a = 25 ? c 1k 100 r l = 10k 5 collector dark current i ceo (a) ambient temperature t a ( ? c ) 75 50 100 25 0 ? 25 v ce = 20v 10 ? 10 10 ? 9 10 ? 8 10 ? 7 10 ? 6 10% output input 90% input output r d v cc r l t d t r t s t f
7 sheet no.: d3-a02501en GP1S52VJ000F fig.13 detecting position characteristics (1) fig.14 detecting position characteristics (2) relative collector current (%) shield moving distance l ( mm ) ? 1.5 0 50 100 ? 1 ? 0.5 0 0.5 1 1.5 2 2.5 sensor shield l + ? i f = 20ma, v ce = 5v t a = 25 ? c 0 relative collector current (%) ? 3 0 50 100 ? 2 ? 1012345 ? + 0 l shield sensor i f = 20ma, v ce = 5v t a = 25 ? c shield moving distance l ( mm ) remarks : please be aware that all data in the graph are just for reference and not for guarantee.
8 sheet no.: d3-a02501en GP1S52VJ000F design considerations design guide 1) prevention of detection error to prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) position of opaque board opaque board shall be installed at place 4mm or more from the top of elements. (example) this product is not designed against irradiation and incorporates non-coherent ired. degradation in general, the emission of the ired used in photocouplers will degrade over time. in the case of long term operation, please take the general ired degradation (50% degradation over 5 years) into the design consideration. parts this product is assembled using the below parts. ? photodetector (qty. : 1) category material maximum sensitivity wavelength (nm) sensitivity wavelength (nm) response time ( s) phototransistor silicon (si) 800 400 to 1 200 3 ? photo emitter (qty. : 1) category material maximum light emitting wavelength (nm) i/o frequency (mhz) infrared emitting diode (non-coherent) gallium arsenide (gaas) 950 0.3 ? material case lead frame plating black noryl resin solder dip. (sn ? 3ag ? 0.5cu) 4mm or more
9 sheet no.: d3-a02501en GP1S52VJ000F manufacturing guidelines soldering method flow soldering: soldering should be completed below 260 ? c and within 5 s. please take care not to let any external force exert on lead pins. please don't do soldering with preheating, and please don't do soldering by re ow. hand soldering hand soldering should be completed within 3 s when the point of solder iron is below 350 ? c. please solder within one time. please don't touch the terminals directly by soldering iron. soldered product shall treat at normal temperature. other notice please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and pcb varies depending on the cooling and soldering conditions. flux some ux, which is used in soldering, may crack the package due to synergistic effect of alcohol in ux and the rise in temperature by heat in soldering. therefore, in using ux, please make sure that it does not have any in uence on appearance and reliability of the photointerrupter.
10 sheet no.: d3-a02501en GP1S52VJ000F cleaning instructions solvent cleaning : solvent temperature should be 45 ? c or below. immersion time should be 3 minutes or less. ultrasonic cleaning : the affect to device by ultrasonic cleaning is different by cleaning bath size, ultrasonic power output, cleaning time, pcb size or device mounting condition etc. please test it in actual using condition and con rm that doesn't occur any defect before starting the ultrasonic cleaning. recommended solvent materials : ethyl alcohol, methyl alcohol and isopropyl alcohol. presence of odc this product shall not contain the following materials. and they are not used in the production process for this product. regulation substances : cfcs, halon, carbon tetrachloride, 1.1.1-trichloroethane (methylchloroform) speci c brominated ame retardants such as the pbbos and pbbs are not used in this product at all. this product shall not contain the following materials banned in the rohs directive (2002/95/ec). ?lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (pbb), polybrominated diphenyl ethers (pbde).
11 sheet no.: d3-a02501en GP1S52VJ000F package speci cation case package package materials anti-static plastic bag : polyethtylene moltopren : urethane partition : corrugated berboard packing case : corrugated berboard package method 100 pcs of products shall be packaged in a plastic bag, ends shall be xed by stoppers. the bottom ot the packing case is covered with moltopren, and the partition is set in the packing case. each partition should have 1 plastic bag. the 10 plastic bags containing a product are put in the packing case. moltopren should be located after all product are settled (1 packing contains 1 000 pcs). packing composition moltopren partition anti-static plastic bag packing case
12 sheet no.: d3-a02501en GP1S52VJ000F important notices the circuit application examples in this publication are provided to explain representative applications of sharp devices and are not intended to guarantee any circuit design or license any intellectual property rights. sharp takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of sharp's devices. contact sharp in order to obtain the latest device specification sheets before using any sharp device. sharp reserves the right to make changes in the speci cations, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. manufacturing locations are also subject to change without notice. observe the following points when using any devices in this publication. sharp takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used speci ed in the relevant speci cation sheet nor meet the following conditions: (i) the devices in this publication are designed for use in general electronic equipment designs such as: --- personal computers --- of ce automation equipment --- telecommunication equipment [terminal] --- test and measurement equipment --- industrial control --- audio visual equipment --- consumer electronics (ii) measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when sharp devices are used for or in connection with equipment that requires higher reliability such as: --- transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- traf c signals --- gas leakage sensor breakers --- alarm equipment --- various safety devices, etc. (iii) sharp devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- space applications --- telecommunication equipment [trunk lines] --- nuclear power control equipment --- medical and other life support equipment (e.g., scuba). if the sharp devices listed in this publication fall within the scope of strategic products described in the foreign exchange and foreign trade law of japan, it is necessary to obtain approval to export such sharp devices. this publication is the proprietary product of sharp and is copyrighted, with all rights reserved. under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of sharp. express written permission is also required before any use of this publication may be made by a third party. contact and consult with a sharp representative if there are any questions about the contents of this publication. [h150]

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